SanDisk announced joint manufacturing deals in 3Q15
During fiscal 3Q15, SanDisk (SNDK) announced joint manufacturing deals with Toshiba (TOSBF) and Hewlett-Packard (HPQ). With Toshiba, SanDisk announced the initiation of equipment installation of 3D NAND in the new Fab 2 facility or semiconductor manufacturing plant at the Yokkaichi operation in Japan (EWJ).
New Fab 2 is aimed to aid in the transition of a considerable portion of the current Yokkaichi 2D NAND capacity to the 3D flash memory. Both companies signed “definitive agreements for joint manufacturing of 3D flash memory and investment in New Fab 2.”
You can read our article SanDisk-HP Alliance Will Bring SCM Technology to the Memory Space to know more details about the SanDisk-HP partnership.
Key features of 3D NAND
3D NAND is a new advanced type of flash memory that can store 16 times more than NAND memory chips used in smartphones, cameras, and other mobile devices to store music, pictures, and other data. 3D NAND is considered the future of next-generation chips. 3D NAND offers significant performance advantages over planar NAND architecture, which is why Micron’s (MU) new products have targeted 3D NAND space for their growth.
Samsung leads 3D NAND space
In August 2013, Samsung (SSNLF) got credit for being the first company to offer 3D NAND. In May 2014, Samsung announced the completion of its dedicated 3D V-NAND production facility. Samsung uses a 40-nm (nanometer) process for 3D NAND. Samsung (SSNLF) chose to use a 32-layer, 86-GB (gigabyte) die to reduce its die footprint instead of maximizing its capacity. This makes Samsung’s V-NAND the smallest die size of any product currently available on the market.